A quantitative structural characterisation of active semiconducting materials (mSi; SiO2; Al2O3; TiO2) for use in printed electronics using a combination of Small Angle Light Scattering (SALS) and Ultra Small Angle X-ray Scattering (USAXS)

Abstract

Four nanostructured active semiconducting materials currently used in electronic inks have been structurally characterised using a combination of small angle scattering techniques and scanning electron microscopy. The percolation theory and scaling laws have been used to obtain quantitative correlations of the network topologies and the local micro-structures with the electronic and electrical properties of the printed, electronic devices.The small angle light scattering has been used to expand the lower q-range of the Ultra Small Angle x-ray Scattering curves of the 2503 metallurgical grade silicon (mSi), silicon dioxide (SiO2), aluminium dioxide (Al2O3) and titanium dioxide (TiO2) materials by close to an order of magnitude, thereby providing valuable clustering properties for each material. Each scattering curve presented a series of multiple structural levels, which are then quantified using the Unified power-law approach to provide valuable clustering characteristics such as the degree of aggregation, polydispersity and geometry standard deviation. Subsequently, a fully screen-printed field effect transistor that uses mSi as the active material is demonstrated. The transistor had an ON/OFF current-ratio of 104; an electron mobility of 0.7 cm2/V s; a leakage current in the order of 5 × 10−9 A, and no current saturation.