Abstract
ABSTRACTA quantitative model of surface segregation free from adjustable parameters is suggested for the growth of ternary III-V compounds. In contrast to previous approaches, the model considers the dynamics of surface population by the three elements producing the ternary alloy. The underlying assumption is that the atoms in the adsorption layer are in equilibrium with the crystal bulk. Elastic strain arising in the epitaxial layer due to the lattice constant mismatch with the substrate is found to be one of the key factors affecting segregation. Along with growth temperature, it controls the segregation efficiency and the composition profile evolution in a growing heterostructure. The effect of the V/III ratio, growth rate and other parameters is accounted for. Here, we apply the model to analyze the InGaAs growth by molecular beam epitaxy owing to the vast experimental data available for the model verification. The theoretical predictions show a good agreement with the experimental observations
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