Abstract
This paper presents an analytical model for a terahertz wave-controlled graphene-gated semiconductor field-effect transistor (GSFET) operated in the terahertz regime. Analysis has been performed to explore the effect of illumination on the graphene-semiconductor field effect transistor detector in the determination of drain characteristics, transfer characteristics, and transconductance considering both the photoconductive effect and photovoltaic effects. The analysis presented shows the potential of Graphene-HgCdTe FET as a high-speed terahertz detector. From the results, the device is highly sensitive to the exposed terahertz radiation causing a large change in the drain current in comparison to the dark condition which is evident from the drain characteristics.
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