Abstract
A new method is proposed for analysing the static characteristics of laser diodes, specifically the current leakage which is characteristic of buried heterostructure lasers and deteriorates their high performance. The new method is based on the fact that the junction voltage saturates over threshold. From a combination of the derivatives of experimental current-voltage and current-light characteristics the internal resistances of laser diodes are obtained in a simple graphical way and the electrical characteristics of leakage are obtained without specific assumptions on the functional relation between current and voltage. The new method is applied to the 1.3 mu m wavelength InGaAsP VSB-type lasers in which current leakage is anticipated. It gives adequate values for internal resistances and the amount of leakage current, and suggests the position of leakage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
