Abstract
Semi-physical equivalent circuits for modeling substrate coupling in the design of Si bipolar MMICs are proposed. The model parameters can be calculated for arbitrary layout configurations. Some of them are determined from area- and length-specific capacitances, measured on test structures, while others are calculated by use of a new numerical simulator called SUSI. Both the simulator and the equivalent circuits have been experimentally verified up to 40 GHz. For this, special test structures were designed and fabricated.
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