Abstract
The processes involved in the Mg2Si film growth on the Si(111) surface at different temperatures in UHV were studied in a single experiment with a sample whose surface had the wedge-shaped temperature distribution within the range of 360–510 °C. The Mg2Si film was grown by a pulsed deposition of Mg at the rate of up to ∼104 nm/s. The Raman spectroscopy data show that Mg2Si formed only on the colder sample area, but for T > 484 °C it was not observed. The mean residence time of a Mg atom on Si(111) at 480 °C is estimated as ∼ 10−6 s. The paradigm of experiments with non-uniformly heated samples is briefly considered. While studying various temperature-dependent processes, the necessary number of experiments can be radically reduced by creating temperature distribution on the sample surface.
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