Abstract
It is shown that the correct-equivalent-box representation of implanted doping profiles, derived in terms of the process parameters by matching the charge-voltage relationships of the actual profile and the box profile, can be used for accurately simulating the electric characteristics of surface-channel MOSFETs and MESFETs having implanted channels. Because the correct box representation is known directly in terms of the doping profile parameters, which can be obtained from process simulation, the need for experimental determination of the box is obviated. The application of the model can substantially reduce the number of experimental trial-and-error iterations involved in the development of devices and circuits. The correct box is also applicable to the CCDs whose physics of operation is similar to that of MOSFETs. >
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