Abstract
A technique and precision instrumentation developed for rapid characterization of dielectric layers is described. It involves the use of a kinematically stable, flattened probe placed directly on the dielectric layer formed on top of a conducting substrate. This technique does not involve device fabrication and hence avoids any fabrication-induced changes in the dielectric layer. Electrical characterization involves static I-V measurements to breakdown, self-healing behaviour, charge to breakdown and time to breakdown distributions in constant current and constant voltage modes. The technique was used to characterize thin (38 nm) silicon dioxide films and also relatively thick (320 nm) buried oxide layers in two types of SIMOX SOI (separation by implanted oxygen - silicon on insulator) substrates. The I-V study clearly showed that SIMOX oxides formed by the multiple oxygen implantation process are superior to those formed by a single oxygen implantation step.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
