Abstract
Based on the extensive application of 2 × 1.7MV Tandetron accelerator, a low-energy cluster chamber has been built to explore for synthesizing graphene. Raman spectrum and atomic force microscopy (AFM) show that an amorphous carbon film in nanometer was deposited on the silicon by C4 cluster implantation. And we replaced the substrate with Ni/SiO2/Si and measured the thickness of Ni film by Rutherford backscattering spectrometry (RBS). Combined with suitable anneal conditions, these samples implanted by various small carbon clusters were made to grow graphene. Results from Raman spectrum reveal that few-layer graphene were obtained and discuss whether IG/I2D can contribute to explain the relationship between the number of graphene layers and cluster implantation dosage.
Highlights
In the past of several decades, ion beam analysis (IBA) based on low-energy accelerator has developed to be a comprehensive particle analytical discipline system [1,2,3,4]
In order to understand the influence induced by implanting multi-energy ions to the substrate, in particular several defects that lead to some phase transitions in matter, in situ characterization of these transients which can exhibit a clear physical image on changeable process of the structure was performed by the acceleratortransmission electron microscopy (TEM) interface system [7,8]
Ultra-thin carbon film deposition Figure 2 shows Raman spectrum and atomic force microscopy (AFM) images of the sample synthesized by C4 ions implantation
Summary
In the past of several decades, ion beam analysis (IBA) based on low-energy accelerator has developed to be a comprehensive particle analytical discipline system [1,2,3,4]. In order to understand the influence induced by implanting multi-energy ions to the substrate, in particular several defects that lead to some phase transitions in matter, in situ characterization of these transients which can exhibit a clear physical image on changeable process of the structure was performed by the acceleratortransmission electron microscopy (TEM) interface system [7,8]. We have developed some extensive applications, including accelerator-TEM interface system [7] and doubleion beam radiation chamber and another new design of low-energy cluster chamber for ion implantation
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