Abstract
A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel–Kramers–Brillouin under spatially varying electric field, to incorporate effective band edge states broadening, and to evaluate the drain current by Landauer equation with consideration of electron reflection at the tunnel junction. The model not only shows good accuracy, speed, and smoothness, but is also some predictive capability so that the effects of changing material parameters on IC characteristics are well captured. The model is validated with atomistic simulation data for several materials.
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