Abstract
Black box representations for several junction-isolated integrated circuit types have been developed which are capable of predicting the transient ionising radiation performance. This is a significant change from previous methods in which the model reproduces measurement data. The basis for the development has been to identify, from detailed circuit modelling, the malfunction mechanisms which cause upset of operation. The mechanisms have been characterised in terms of circuit operating conditions and fabrication process-related parameters. The malfunction relationships have been incorporated into black box representations to give simplified models capable of predicting the radiation performance from user-specified environments. Good correlation has been achieved between predicted and observed performances for digital circuits made by gold-doped and other technologies and for a linear application.
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