Abstract
A practical technique has been developed for controlling the field profile in a thin epitaxial layer of n-GaAs biased above the transferred-electron threshold. This employs a special cathode composed of an electron-injecting n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> contact complemented by an electron-blocking (reverse-biased Schottky barrier) contact, which extends a selected distance past the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> contact. The situation is characterized theoretically, and potential profile measurements confirm that the desired profile can be obtained in this manner.
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