Abstract

In this paper, very simple and insightful sets of noise parameters expressions for a power-constrained simultaneous noise and input matching (PCSNIM) CMOS LNA design technique are newly introduced. Based on the noise parameters expression, the design principle, advantages, and limitations are clearly explained. The proposed LNA is optimized for low voltage, low power 900 MHz Zigbee applications based on 0.25 /spl mu/m CMOS technology. Measurement results show a power gain of 12 dB, NF and NF/sub min/ of 1.35 dB, and IIP3 of -4 dBm while dissipating the DC current of 1.6 mA (only 0.7 mA for NMOS transistor) at a supply voltage of 1.25 V.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call