Abstract
The characteristics of an aptamer-modified Ta2O5/ZnO field-effect transistor as a prototype label-free immunosensor for the potentiometric electrical detection of immunoglobulin G (IgG) were studied. The Ta2O5/ZnO film was grown on a glass substrate by a facing-target sputtering method. Stable operation in electrolyte solution with a small hysteresis width and a low gate leakage current was realized. The immunosensor exhibited a proportional sensitivity to the logarithmic human IgG concentration in the range of 0.35–23 µmol·dm−3 with a rapid response time of ∼15 s.
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