Abstract
A 2-D potential model for parallel gated Junctionless field effect transistor is presented in this paper. The potential model is obtained by solving Poisson’s equation. Potential model for different regions are obtained separately. Initially, the parabolic potential profile is assumed to be extended over the entire body. However as the device consists of alternate depleted and non-depleted regions, potential profile will not follow same trend throughout the entire channel. The boundary conditions are obtained from the initial assumption while the solutions of Poisson’s equation are different in different regions. The model obtained is compared with simulation results obtained from TCAD. The model is found to be in close agreement with the TCAD simulation results.
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