A Possible Production Technique for Modulation Doped Sige Heterostructures

Abstract

AbstractThe SiGe graded buffer layer is one of the most promising virtual substrates for future Si based high speed devices. The production of the SiGe buffer layer is, however, hampered by the time consumed by the synthesis of the several μm thick epitaxial layer. Low energy plasma enhanced chemical vapour deposition (LEPECVD) is a growth technique developed for low temperature epitaxy at high rates. Here we study the possibility to combine LEP-ECVD for graded SiGe buffer layer growth with other techniques for the growth of the electrically active layer.