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Abstract
We propose that the driving force of the ultrafast crystalline-to-amorphoustransition in phase-change memory alloys is caused by strained bonds existingin the (metastable) crystalline phase. For the prototypical example ofGe2Sb2Te5, we demonstrate that upon breaking of the longer Ge–Te bond by photoexcitation, a Geion is shot from an octahedral crystalline to a tetrahedral amorphous position by theuncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes thetetrahedral surroundings of the Ge atoms and ensures the long-term stability of theoptically induced phase.
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