Abstract
A novel structure for generating a positive low-voltage power supply with respect to the highest positive potential of a power device is proposed in this paper. And the proposed low-voltage power supply is integrated with high-voltage insulated gate bipolar transistor (IGBT), which can provide a positive power supply for the low-voltage circuit (LVC) in the high voltage side. The simulation results show that three low voltage power supplies of about 4.2 V, 8 V and 11V can be achieved when the power device is operated at 1500V, respectively.
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