A Polaronic View of Impact Ionization in Amorphous Se Films

Abstract

In this letter, it is proposed that the impact ionization in amorphous Se films, which triggers avalanche carrier multiplications, occurs through transformations of electron and hole motions from polaronic to supersonic states, the situation resembling those envisaged for semiconducting one‐dimensional organic polymers. However, reflecting unique origins of the conduction and the valence band in Se, the electron–lattice interaction appears stronger than the hole–lattice interaction, which seems to be responsible for characteristic properties such as less efficient electron multiplication. The idea is consistent with the fact that a‐Si:H having three‐dimensional structures exhibits no corresponding phenomena.