Abstract
A two layer resist system for the e-beam/deep-UV same-level-mixed lithography are described, which consists of PMMA (poly ( methyl methacryrate )), as a top layer and PMGI (poly ( dimethyl glutarimide )) as a bottom layer. Controlled undercut profiles are obtained both in e-beam and deep-UV lithography. Good adhesion of PMGI to the GaAs substrate during wet recess-etching prevents excessive side etching of the substrate. 0.25-0.5 um gate electrodes of GaAs FET's have been fabricated by using the two layer resist system.
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