Abstract
A plasmonic terahertz detector that integrates a voltage-controlled planarbarrier into a grating gated GaAs/AlGaAs high electron mobility transistor hasbeen fabricated and experimentally characterized. The plasmonic response atfixed grating gate voltage has a full width at half-maximum of 40 GHz at∼405 GHz. Substantially increased responsivity is achieved by introducing an independentlybiased narrow gate that produces a lateral potential barrier electrically in series with theresonant grating gated region. DC electrical characterization in conjunction withbias-dependent terahertz responsivity and time constant measurements indicate thata hot electron bolometric effect is the dominant response mechanism at 20 K.
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