Abstract
This work studies the gain from plasmonic quantum dot (QD) nanolaser. A metal/semiconductor/metal (MSM) structure was considered to attain plasmonic nanocavity with active region contains: QD, wetting layer (WL) and barrier layers. Band alignment between layers was used to predict their parameters. Momentum matrix element for transverse magnetic (TM) mode in QD structure was formulated. Waveguide Fermi energy was introduced and formulated, for the first time, in this work to cover the waveguide contribution (Ag metal layer) in addition to the active region. High net modal gain was obtained when the waveguide Fermi energy was taken into account which means that the increment comes from the material gain not from the confinement factor. The change in waveguide Fermi energy in the valence band explained the high gain, where the valence band QD states are fully occupied referring to an efficient hole contribution.
Highlights
While the quantized active region was attained by the quantum structures: quantum wells, quantum wires and quantum dots (QDs)
Li and Ning were predicts a high net modal gain in plasmonic nanolaser and they assigned it to the slowdown in the average energy that was propagated in the structure [6] [9]
Since the optical gain of the plasmonic QD nanolaser was investigated in this study at room temperature, the carrier distribution can be assumed to be in quasi-equilibrium
Summary
While the quantized (nano sized) active region was attained by the quantum structures: quantum wells, quantum wires and quantum dots (QDs). In the conventional semiconductor laser with nano-active region, a considerable part of the mode profile spread out into the dielectric cladding This increases the scattering loss and reduces gain [1]. Li and Ning were predicts a high net modal gain in plasmonic nanolaser (with bulk active region) and they assigned it to the slowdown in the average energy that was propagated in the structure [6] [9]. The obtained results show that covering the structure by a metal (Ag) increases the gain by a huge value compared with that obtained from conventional QD laser This increment on net gain came from the material gain not from the confinement factor. The obtained results were assessed with many works about metal-semiconductor contacts [10] [11]
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