Abstract
A lithography-free, self-assembly fabrication route exploiting black silicon (B-Si) microstructures to design a perfect absorber based on densely and disordered packed gold nanoparticles (AuNPs)-modified silicon forests have been proposed in this paper. The geometrical dimensions of microstructures were controlled by altering the flow rate of SF6/O2 in the reactive ion etching (RIE) chamber. The RIE B-Si shows a unique geometry that consists of a combination of sharp “needles” at the top and rounded “holes” at the bottom, and also shows an excellent adaptive relationship with Au deposition. By combining the light-trapping capability of the B-Si and the plasmonic nature of AuNPs in the near-infrared (NIR) range, an experimental absorption of 96.5% is achieved in a wide range from 350 to 2500 nm. This material has the potential for photonic applications, including solar energy harvesting or NIR-sensitive optoelectronic devices.
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