Abstract
A plasma immersion ion implanation (PIII) reactor compatible with integrated-circuit fabrication has been developed. Using this system, metallic impurity gettering with a noble gas plasma, sub-100-nm p+/n junction formation with SiF 4 plasma for preamorphization and BF 3 plasma for doping, trench conformal p+ doping, and Pd ion seeding implantation for selective Cu electroless plating were successfully carried out. The PIII system consists of an electron cyclotron resonance plasma source, a processing chamber with wafer bias supply, a sputtering target with bias supply, gas handling and plasma diagnostic tools. The apparatus is described in this paper. Plasma characterization and reactor performance are also presented.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
