Abstract
A silicon piezoresistive integrated pressure sensor (IPS) containing sensing, temperature compensation and amplification circuits has been developed for automotive and industrial applications, etc. The chip of the IPS is bonded on a silicon support 2 mm thick, using an electrostatic bonding technique for reducing unwanted thermal stress from the support and package. Temperature invariant and laser trimmable printed thick film resistors for adjusting temperature compensation and Transfer function scaling are formed on the ceramic plate around the IPS chip, which is then mounted in a modified TO-3 package as a three terminal device. Experimental results and simulations of span temperature compensation in the sensing element bridge and the fully assembled IPS are shown here to be in good agreement. The temperature dependence of the zero and non-linearity of the IPS are also described.
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