Abstract
A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.