Abstract
In this paper we present a physics based analytical model for the drain current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.
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