A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation – Part II: The ferroelectric common-source and common-gate amplifiers

Abstract

In this paper, Part II of the authors’ paper [1], the physically-derived nonquasi-static model presented in [1] is applied to the ferroelectric common-source and common-gate amplifiers. The model is based on the method of partitioned channel and ferroelectric layers and is valid in accumulation, depletion, and all three cases of inversion: weak, moderate, and strong. The equations of this model are based on the standard MOSFET equations that have been adapted to include the ferroelectric properties. The model code is written in MATLAB and outputs voltage plots with respect to time. The accuracy and effectiveness of the model are verified by two test cases, where the modeled results are compared to empirically-derived oscilloscope plots.