Abstract
This paper is intended to show that there is a good fit between the measured and the modelled parameters for the HEMTs. These parameters include the components of the scattering and admittance matrices, the operating power gain, the transducer power gain and the maximum stable gain for the device. The modelled parameters are based on the physics of the device and include second-order effects such as a mobility degradation, velocity saturation as well as the conduction in the AlGaAs layer.
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