Abstract
SBT memristor is a physical memristor built on nanometer film, described by a deterministic flux-controlled mathematical model. A new physical SBT-memristor-based Chua's circuit is presented in this paper, using the memristor to replace the Chua diode to connect with a negative conductance in parallel. The circuit can be well modeled by a fourth-order nonlinear system in the voltage-current domain and a third-order nonlinear system in the flux-charge domain, respectively. The dependences of the circuit stability on both the initial state value of the SBT memristor and the linear resistance in the circuit are analyzed theoretically, verified by numerical simulations, which shows that the circuit system has complex dynamics with multiple behaviors, including sink, periodic cycle, limit cycle, chaos, and some complicated transient dynamical behaviors. The new findings shed light on future research on the physical realization of the SBT-memristor-based Chua's circuit and other similar devices.
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