Abstract
In this letter, an accurate physical model for work-function variation (WFV) relevant to ultrashort-channel (<; 32 nm) MOSFETs has been formulated that considers the work function and size of the individual grains in determining the local MOS band structure. The proposed model is shown to be much more accurate than the most recently published model. Additionally, using this new model, WFV effect in a 3-D device can be captured using 2-D device simulation, resulting in a significantly lower simulation time.
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