Abstract
This paper presents a detailed physical model for the experimentally determined parameters of the edge effects in narrow width MOSFETs. From experiments, it was found that these edge effects are composed of a parasitic resistance ( R P) in series with the intrinsic device, a parallel parasitic conductance ( G P) in parallel with the intrinsic device, and a channel width reduction ( ΔW). It was found that both the effective channel width W EFF (= W msk − ΔW) and the absolute value of G P increased with gate bias, and that G P was negative. The physical origin of G P is described and detailed comparisons between the experimental results of I edg, G P and W edg, and those calculated from the physical model using the fabrication details of the narrow width MOSFETs are discussed.
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