Abstract
An Activated Barrier Double Well Thermionic Emission (ABDWT) model is used to simulate long-term Data Retention (DR) in 3D NAND Flash memory cells. The contribution due to only charge De-Trapping (DT) when adjacent cells are at the same charged state and additional contribution due to charge Lateral Migration (LM) when adjacent cells are at different charged states are modeled. The Temperature (T), Program Level (PL), and Erase-Program Cycle (EPC) impacts are studied. The model simulations are verified against the experimental data from various published reports with consistent model parameters. It is shown that at higher temperatures and programming levels, the data retention increases for DT component, whereas LM component increases with the temperature and the lateral electric field.
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