Abstract

The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is conventionally established by using buffer gas mixtures or oxygen pumps based on zirconia. However, this approach has some limitations, such as difficulty in regulating oxygen partial pressure in some intermediate-pressure regions or the possibility of influencing the redox process by gases that can also be incorporated into the oxide or react with the surface via heterogeneous catalysis. Herein, we present an alternative physical method in which the oxygen partial pressure is controlled by dosing pure oxygen inside an ultra-high vacuum chamber. To monitor the conductivity of the oxide under investigation, we employ a dedicated four-probe measurement system that relies on the application of a very small AC voltage, in combination with lock-in data acquisition using highly sensitive electrometers, minimizing the electrochemical polarization or electro-reduction and degradation effects. By analyzing the model material SrTiO3, we demonstrate that its characteristic redox behavior can be reproduced in good agreement with the theory when performing simultaneous electrical conductivity relaxation and high-temperature equilibrium conductivity measurements. We show that the use of pure oxygen allows for a direct analysis of the characteristic oxygen dose, which opens up various perspectives for a detailed analysis of the surface chemistry of redox processes.

Highlights

  • Understanding the defect chemistry of solids is key to modeling and predicting their electrochemical properties

  • We show that the use of pure oxygen allows for a direct analysis of the characteristic oxygen dose, which opens up various perspectives for a detailed analysis of the surface chemistry of redox processes

  • In a proof of principle approach, we demonstrate that high-temperature equilibrium conductance (HTEC) and electrical conductivity relaxation (ECR) measurements can be performed simultaneously, the results of which are in good qualitative agreement with the expectations

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Summary

INTRODUCTION

Understanding the defect chemistry of solids is key to modeling and predicting their electrochemical properties. Since the concentration of point defects in an oxide is directly related to the concentration of charge carriers, one of the most straightforward experimental methods to address the defect structure is to measure the electric conductivity as a function of temperature and oxygen activity.[9,10]. This is realized by exposing an oxide to a buffer gas mixture,[11] such as CO/CO2 or H2/H2O. Scitation.org/journal/apm mixtures by pure oxygen, which is dosed into a vacuum chamber In this way, the oxygen activity can be directly controlled by varying the total oxygen pressure from the atmospheric pressure down to high vacuum conditions, allowing for a detailed analysis of the redox reactions. In a proof of principle approach, we demonstrate that high-temperature equilibrium conductance (HTEC) and electrical conductivity relaxation (ECR) measurements can be performed simultaneously, the results of which are in good qualitative agreement with the expectations

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