A physical GaAs MESFET model implemented in SPICE

S.G Ayyar,C.R Westgate,A.G Andreou

doi:10.1109/iscas.1991.176110

A physical GaAs MESFET model implemented in SPICE

S.G Ayyar, C.R Westgate + Show 1 more

https://doi.org/10.1109/iscas.1991.176110

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Publication Date: Jan 1, 1991

Affiliation: Johns Hopkins University

#Physical Model #Temperature-dependent Effects + Show 6 more

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Abstract

A new approach is presented for including physical GaAs MESFET models in SPICE. The approach is used to incorporate in SPICE 3d1 a physical model based on a two-piece velocity-field approximation for GaAs. Temperature-dependent effects are included in the physical model. Good agreement between measured and simulated data is obtained. >

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