Abstract
The importance of mobility degradation (Δμ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) due to Negative Bias Temperature Instability (NBTI) stress is studied for precise modeling of p-MOSFET drain current degradation (Δ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ID</i> ). An improvement to the SPICE mobility model is presented to incorporate Δμ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> , and the modified model is validated against experimental Δ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ID</i> and transconductance degradation (Δ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gm</i> ) over time, in the subthreshold to strong inversion region, across different SiON and high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> metal gate (HKMG) devices. To gain further insight into NBTI mobility degradation, the well-known physics-based mobility model consisting of three scattering components is revalidated across different devices. This analysis is beneficial for device and circuit simulations in Technology CAD and SPICE environments, respectively, for different process technologies.
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