Abstract
AbstractUp‐to‐date optical storage technology calls for large memory capacity, expanded storage dimension, rewritable capability, low cost, and high energy efficiency, which poses stringent requirements on the storage medium. In this study, a novel BaSi2O5:Eu2+,Nd3+ photostimulated luminescence (PSL) phosphor is developed and then made into phosphor‐in‐glass (PiG) storage medium. Upon ultraviolet light irradiation (write‐in), the generated electrons are captured by the traps, which can be further released by thermal or near‐infrared laser stimulation (read‐out). An insightful investigation is carried out to establish the relationship between trap properties and PSL performance. Demonstration application confirmed the intensity‐multiplexing optical information (including the designed bar code, quick response (QR) code, graphic patterns, and binary data) encoding/decoding. Remarkably, BaSi2O5:Eu2+,Nd3+ PSL PiG show excellent erasable‐rewritable capability thanking to the admirable anti‐ultraviolet property in glass host, as well as good optical data retention ability owing to the spatially isolated deep traps. Hopefully, the present work can push forward the research progress of PSL material and its practical application in optical storage.
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