Abstract
Methylammonium bismuth iodide (CH3NH3)3Bi2I9 (MBI) is a promising hybrid organic-inorganic material for photo-voltaic applications. A complete photodetector with a fast response time, in the order of 150 ms, was fabricated using MBI crystals grown via anti-solvent diffusion crystallization. Analyzing single crystals under varying illumination intensities clearly revealed an illumination dependant carrier density providing good photodetector performance. While band structure calculations predict a band gap of 1.4 eV, a more complex transport mechanism is revealed by Hall measurements, indicating the presence of states within the band gap close to the Fermi energy, possibly originating from crystallographic defects or internal redox processes.
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