Abstract
ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.
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