Abstract
The room temperature adsorption of bismuth on clean cleaved p-type InP(110) surfaces has been studied with soft X-ray photoelectron spectroscopy in the coverage range 0.01-60 monolayers (ML): Line shape analysis of the overlayer (Bi 5d) and substrate (In 4d) core level emission reveals that the interface is abrupt. Bismuth is preferentially adsorbed at a single substrate site within the first layer. However, strong clustering takes place above this coverage. The evolution of the band bending indicates that different mechanisms may be important in the high and low coverage regimes. At low coverages the imperfections in the first bismuth layer cause high band bonding which is reduced as the first layer nears compleion. Above 20 ML the semi-metallisation of the overlayer leads to pinning in accordance with the metal induced gap state model.
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