Abstract
Reactions at Ti/Cu interfaces were investigated by ultraviolet and x-ray photoelectron spectroscopy (UPS, XPS). For Ti deposition onto copper substrates at ambient temperature, our measurements strongly suggest that at the interface an amorphous alloy is formed. This idea is supported by the comparison of our UPS data to the ones of bulk glassy CuxTi1−x. The thickness of this amorphous interlayer which is built up onto the polycrystalline Cu substrate corresponds to a nominal Ti coverage of about 10 monolayers. At a substrate temperature of 300 °C, however, the interface reaction is still present at nominal Ti coverages over a hundred monolayers. Presumably the crystalline phase Cu3Ti2 is formed.
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