A photodetector based on p-GaN/N-MoS2 QDs heterojunction with high responsivity

Abstract

Molybdenum disulfide (MoS2) is the most thoroughly investigated for photodetection applications with direct bandgap transition in low-dimensional structures, high light–matter interaction, and good carrier mobility. In this work, MoS2 quantum dots was synthesis by liquid exfoliation and characterized using scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Fluorescence emission spectra (FES), UV–vis spectroscopy, and Photoluminescence (PL). The average size is ∼ 3.6 nm with strong absorption in the UV region and a band gap of 4.49 eV. Moreover, a novel structure of N- MoS2 QDs \\ p-GaN heterojunction photodetector was deposited by spray coating. The PL of N- MoS2 QDs \\ p-GaN emission spectra expanded from UV to visible light with high responsivity to the visible light of 7.06 mA W−1 and detectivity of 1.24 × 1010 jones.