Abstract
The phonon‐plasmon coupling of p‐type, Ge‐doped gallium arsenide films have been study using Raman spectroscopy. The films were grown epitaxially on (100) GaAs substrates by liquid phase epitaxy employing Ge as dopant at various concentrations, which resulted in films with hole densities in the range of 5×1017−5×1020 cm−3. The Raman experiments were performed at near backscattering geometry at room temperature, 100 and 20 K. In the configuration employed only the LO mode is allowed. The intensity, frequency and linewidth of this mode have been discussed in terms of LO phonon‐plasmon coupling due to impurity‐induced Fröhlich interaction and or deformation potential mechanisms.
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