Abstract
A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate either effect, but not both. The present model has been used to describe both surface- and substrate-related trapping phenomena in epitaxial or ion-implanted MESFETs. The model was experimentally verified in terms of pulsed I-V characteristics and pulsed AC response.
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Schedule a callMore From: IEEE transactions on microwave theory and techniques
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