A perspective study on Au-nanoparticle adorned TiO2-nanowire for non-volatile memory devices

Abstract

In this article, we synthesized Au-nanoparticle (NP) adorned TiO 2 -nanowire (NW) and TiO 2 -NW using glancing angle deposition technique (GLAD) for capacitive memory based application. To analyze memory performance of the device, capacitance (C) versus voltage (V) and conductance (G) versus voltage (V) characteristics were performed at various frequency up to 2 MHz. Consequently, we analyzed C-V hysteresis loop at different sweep voltages from ±2 V to ±10 V. The device Au-NP adorned TiO 2 -NW shows a large memory window (MW) of 12.65 volt at ±10 V and low interface trap density (D it ) of ⁓2.63×10 11 eV -1 cm -2 at 1 MHz operating frequency. The endurance and retention were calculated for both the samples. A higher endurance and stable retention were observed for Au-NP adorned TiO 2 -NW as compared to TiO 2 -NW. The results presented in this article established a strong presence of non-volatile memory based characteristics.