Abstract
The minimum size of metal oxide semiconductor field-effect transistors assessed in terms of their circuit performance, the possibility of quantum-mechanical engineering of the electronic properties of silicon through the modification of the energy band with mechanical stress, Brillouin zone folding, and artificially built-in nanometer-scale potential as well as through the utilization of low dimensional electrons, and single electronics as a quantum limit of nano-power electronics are reviewed. Furthermore, effects of the statistical fluctuation of device edge definition in fabrication and dopant distribution on the minimum size of silicon devices are discussed and the importance of dopant location control is emphasized.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
