Abstract
The band-gap narrowing Δ E g of n-type heavily doped crystals at an arbitrary temperature is investigated, basing on an extended Thomas-Fermi model given by Friedel and on our previous results. In highly degenerate semiconductors, the carrier-donor interaction contribution to Δ E g is approximately proportional to the 1 6 power of electron concentration, in agreement with other theories. An exact expression for the inverse screening length is also obtained and compared with that given by Friedel.
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