Abstract
Thin film solid state galvanic cells were made using leas as the anode, PbF 2 as the electrolyte and BiF 3|Bi as the cathode. The cells were obtained by charging a simple Bi|PbF 2|Bi structure. Such elements develop open-circuit voltages of 353 mV, in good agreement with the theoretical value. The discharge characteristics show a plateau region of several hours. At room temperature current densities of 40 μA cm -2 were measured with voltages of about 200 mV. Short-circuit currents larger than 1 mA cm -2 were obtained. The cells are entirely reversible, and many complete charge-discharge cycles were performed. The evolution of the d.c. internal resistance as a function of discharge is discussed.
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