Abstract
The success of Schottky gates in defining patterns in the two-dimensional electron system (2DES) of AlGaAs/GaAs heterostructures has generally been limited to PDESs located within 150 nm of the semiconductor surface. We describe the fabrication and use of an insulated gate architecture which reduces gate leakage currents for the higher biases required to define patterns in a BDES located up to 700 nm below the semiconductor surface. This architecture is important for periodic gate patterns which extend over macroscopic distances, where the increased leakage current through Schottky gates can severely limit the range of the gate bias. We report photoluminescence spectra obtained while biasing a grid-patterned insulated gate defined over a 1.6 mm by 1.6 mm area and above a low-electron-density, high-electron-mobility heterostructure. This is the first report of a patterned gate architecture suitable for optical and transport studies of the effect of controlled periodicity on a high-quality PDES and its low-temperature ground states in a magnetic field, in particular the magnetically induced Wigner solid.
Published Version
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