Abstract
Based on first-principles calculations we devise an alternative approach to p-type doping in AlN, ZnO, and ZnMgO. Instead of searching for acceptors on the left of the host atoms in the Periodic Table, we propose to search on the far right. We find that F placed at interstitial sites in AlN, ZnO, and ZnMgO acts as a shallow acceptor, leaving a hole in an effective-mass state near the valence-band maximum. We investigate the stability of F impurities and propose a procedure to selectively introduce F in the interstitial lattice sites of the above wide-band-gap semiconductors.
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